Byung-Doo Choe: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Reduction of as carryover by PH3 overpressure in metalorganic vapor-phase epitaxy

Sang-Wan Ryu, Weon Guk Jeong, In Kim, Hee-Dae Kim, Hak-Hwan Kim, Byung-Doo Choe, Seoung-Hwan Park

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 438 KB

english, 1997

2

High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs

Seoung-Hwan Park, Weon-Guk Jeong, Byung-Doo Choe

Journal:

IEEE Photonics Technology Letters

Year:

1994

Language:

english

File:

PDF, 314 KB

english, 1994

3

The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells

Ryu, Sang-Wan, Kim, In, Choe, Byung-Doo, Jeong, Weon Guk

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 324 KB

english, 1995

4

Carbon doping and growth rate reduction by CCl4 during metalorganic chemical-vapor deposition of GaAs

Lee, Jeong-Seok, Kim, In, Choe, Byung-Doo, Jeong, Weon Guk

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 908 KB

english, 1994

5

Analysis of the performance of 1.55-μm InGaAs-InP tensile strained quantum-well lasers

Sang-Wan Ryu, Ween Guk Jeong, Byung-Doo Choe

Journal:

IEEE Journal of Quantum Electronics

Year:

1999

Language:

english

File:

PDF, 90 KB

english, 1999

6

Matrix method for the x-ray rocking curve simulation

Kim, In, Ryu, Sang-Wan, Choe, Byung-Doo, Kim, Hee-Dae, Jeong, Weon Guk

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 326 KB

english, 1998

7

Electric field effects on the photoluminescence in modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs single quantum wells

Yang, G. M., Seo, K. S., Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 370 KB

english, 1994

8

Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy

Lee, Jong Boong, Kim, In, Kwon, Ho Ki, Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 572 KB

english, 1993

9

Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1âxAs heterojunction

Kim, Kwan-Shik, Lee, Jong Boong, Choe, Byung-Doo, Jeong, Weon Guk, Lim, H.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 641 KB

english, 1994

10

Spatial resolution of capacitance-voltage profiles in quantum well structures

Moon, C. R., Choe, Byung-Doo, Kwon, S. D., Lim, H.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 248 KB

english, 1998

11

Electron distribution and capacitance–voltage characteristics of n-doped quantum wells

Moon, C. R., Choe, Byung-Doo, Kwon, S. D., Shin, H. K., Lim, H.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 387 KB

english, 1998

12

Theoretical investigation of gain and linewidth enhancement factor for 1.55-μm tensile strained quantum-well lasers

Sang-Wan Ryu,, Il-Kyo Kim,, Weon Guk Jeong,, Byung-Doo Choe,, Seoung-Hwan Park,

Journal:

Journal of Lightwave Technology

Year:

1997

Language:

english

File:

PDF, 127 KB

english, 1997

13

Investigation of electrical properties and stability of Schottky contacts on (NH4)2Sx-treated n- and p-type In0.5Ga0.5P

Kwon, S. D., Kwon, Ho Ki, Choe, Byung-Doo, Lim, H., Lee, J. Y.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.17 MB

english, 1995

14

Influence of carrier flow on the temperature-dependent capacitance-voltage profiles of heterojunction structures

Kwon, S. D., Lim, H., Shin, H. K., Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

15

Band line-up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance-voltage analysis

Kim, Il-Jong, Cho, Yong-Hoon, Kim, Kwan-Shik, Choe, Byung-Doo, Lim, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

16

Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures

Moon, C. R., Kwon, S. D., Lim, H., Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 338 KB

english, 1998

17

Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on a GaAs substrate

Cho, Yong-Hoon, Choe, Byung-Doo, Lim, H.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 332 KB

english, 1996

18

Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions

Kim, M. G., Kwon, S. D., Kim, C. H., Lee, J. B., Choe, Byung-Doo, Lim, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 668 KB

english, 1993

19

Chemical trends of S-, Se-, and Te-related DX centers in InGaP

Kwon, S. D., Kwon, Ho Ki, Choe, Byung-Doo, Lim, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 307 KB

english, 1995

20

An improved approach for the wave equation solution of graded-index waveguide

Kim, In, Choe, Byung-Doo, Jeong, Weon Guk

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 590 KB

english, 1995

21

Interface properties of (NH4)2Sx-treated In0.5Ga0.5P Schottky contacts

Kwon, S. D., Kim, C. H., Kwon, Ho Ki, Choe, Byung-Doo, Lim, H.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 642 KB

english, 1995

22

Determination of the conduction-band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

Cho, Yong-Hoon, Kim, Kwan-Shik, Ryu, Sang-Wan, Kim, Sang-Ku, Choe, Byung-Doo, Lim, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 349 KB

english, 1995

23

Effect of GaAs[sub y]P[sub 1−y](0≤y

Kwon, Yong-Hwan, Jeong, Weon G., Cho, Yong-Hoon, Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 366 KB

english, 2000

24

Analysis of abnormal x-ray diffraction peak broadening from InGaAs/GaAs multiple quantum wells

Kim, In, Choe, Byung-Doo, Park, Sang Koo, Jeong, Weon Guk

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 357 KB

english, 1997

25

Influence of the DX center on capacitance-voltage profiling for Si δ -doped AlxGa1−xAs

Yang, G. M., Seo, K. S., Choe, Byung-Doo

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 983 KB

english, 1995

26

Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid-phase epitaxy

Kwon, Ho Ki, Kwon, S. D., Kim, In, Lee, Jong Boong, Choe, Byung-Doo, Lim, H.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 947 KB

english, 1995

27

heterostructures: The important role of long-lived carriers near the interface

Cho, Yong-Hoon, Kim, D. S., Choe, Byung-Doo, Lim, H., Lee, J. I., Kim, D.

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 88 KB

english, 1997

28

Threshold current density of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Park, Seoung-hwan, Jeong, Weon-guk, Choe, Byung-doo

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 497 KB

english, 1994

29

Erratum: “Recombination dynamics in n-Al[sub x]Ga[sub 1−x]As/n-In[sub 0.5]Ga[sub 0.5]P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]

Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 234 KB

english, 1998

30

Differential gain of strained InGaAs/InGaAsP quantum-well lasers lattice matched to GaAs

Park, Seoung-Hwan, Kim, Hwa-Min, Jeong, Weon-Guk, Choe, Byung-Doo

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 344 KB

english, 1996

31

Effect of wet oxidized Al[sub x]Ga[sub 1−x]As layer on the interdiffusion of InGaAs/GaAs quantum wells

Choe, Joong-Seon, Ryu, Sang-Wan, Choe, Byung-Doo, Lim, H.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 346 KB

english, 1998

32

Electron distribution and capacitance-voltage profiles of multiple quantum well structure from self-consistent simulations

Moon, C. R., Choe, Byung-Doo, Kwon, S. D., Lim, H.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 267 KB

english, 1997

33

Schottky barrier heights and conduction-band offsets of In[sub 1−x]Ga[sub x]As[sub 1−y]P[sub y] lattice matched to GaAs

Lee, Jong-Kwon, Cho, Yong-Hoon, Choe, Byung-Doo, Kim, K. S., Jeon, H. I., Lim, H., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 265 KB

english, 1997

34

Luminescence properties of heavily carbon doped GaAs

Lee, Jeong-Seok, Kim, In, Choe, Byung-Doo, Jeong, Weon Guk, Sin, Y. K., Min, W. S.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 348 KB

english, 1996

35

The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid-phase epitaxy

Lee, Jong Boong, Kwon, Sang Deok, Kim, In, Cho, Yong Hoon, Choe, Byung-Doo

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1017 KB

english, 1992

36

Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

Ryu, Sang-Wan, Choe, Byung-Doo, Jeong, Weon Guk

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 253 KB

english, 1997

37

Recombination dynamics in n-Al[sub x]Ga[sub 1−x]As/n-In[sub 0.5]Ga[sub 0.5]P type-II heterostructures

Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 285 KB

english, 1998

38

Effects of donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy

Kwon, Ho Ki, Kwon, S. D., Choe, Byung-Doo, Lim, H.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 669 KB

english, 1995

39

Strain-compensated InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Park, Seoung-Hwan, Jeong, Weon-Guk, Choe, Byung-Doo

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 350 KB

english, 1995

40

Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement

Kim, Kwan-Shik, Cho, Yong-Hoon, Choe, Byung-Doo, Jeong, Weon Guk, Lim, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

41

Epitaxial Growth of Indium Phosphide in an Open Flow System

Narita, Shin-ichiro, Choe, Byung-doo, Harada, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

1969

File:

PDF, 280 KB

1969

42

Dependence of Anisotropic Strain Relaxation on Composition of Lattice-Mismatched InGaAsP

Ryu, Sang-Wan, Kim, Hee-Dae, Park, Sang-Koo, Jeong, Weon Guk, Choe, Byung-Doo

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 521 KB

1997

43

Effects of Substrate Misorientation on the Formation and Characteristics of Self-Assembled InP/InGaP Quantum Dots

Kwon, Yong-Hwan, Cho, Yong-Hoon, Choe, Byung-Doo, Park, Sang-Koo, Jeong, Weon Guk

Journal:

Japanese Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 548 KB

english, 1998

44

Donor-Related Deep Levels in In1-xGaxAs

Kwon, Ho Ki, Kwon, S.D., Lim, H., Choe, Byung-Doo

Journal:

Defect and Diffusion Forum

Year:

1998

Language:

english

File:

PDF, 1.24 MB

english, 1998

45

Negative Resistance of AlGaAs Diodes Co-doped with Si and Mn

Gho, Seok-Jung, Park, Seoung-Hwan, Lim, H., Choe, Byung-Doo, Lee, Chang Woo, Ko, Min Kyung, Kim, Yong Tae

Journal:

Japanese Journal of Applied Physics

Year:

1997

File:

PDF, 372 KB

1997

46

Lateral oxidation of AlAs layers at elevated water vapour pressure using a closed-chamber system

Choe, Joong-Seon, Park, Si-Hyun, Choe, Byung-Doo, Jeon, Heonsu

Journal:

Semiconductor Science and Technology

Year:

2000

Language:

english

File:

PDF, 116 KB

english, 2000

47

SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] Ultrafast Phenomena in Semiconductors II - Carrier dynamics of anti-Stokes photoluminescence in staggered-band-lineup AlxGa1-xAs/GaInP2 heterostructures

Cho, Yong-Hoon, Song, Jin-Joo, Kim, Dongsik, Lim, HeeWoong, Choe, Byung-Doo, Tsen, Kong-Thon F., Fetterman, Harold R.

Year:

1998

Language:

english

File:

PDF, 657 KB

english, 1998

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски